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                    [ArticleID] => 301922
                    [Title] => Samsung develops world’s first 512-Mb DDR2 with 70-nm tech
                    [Summary] => SEOUL – Samsung Electronics Co. Ltd., the world leader in advanced memory technology, announced that it has completed the development of the world’s first 512-megabit (Mb) DDR2 SDRAM using 70-nanometer process, the smallest process technology yet applied to a DRAM device.  


The new 70nm technology maintains continuity with the 80nm and 90nm processes Samsung now uses in most DRAM production today. 


However, the number of chips yielded per wafer will be at 100 percent higher than could be obtained with 90nm technology. 


                    [DatePublished] => 2005-10-15 00:00:00
                    [ColumnID] => 133272
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METAL-INSULATOR-METAL

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                    [ArticleID] => 301922
                    [Title] => Samsung develops world’s first 512-Mb DDR2 with 70-nm tech
                    [Summary] => SEOUL – Samsung Electronics Co. Ltd., the world leader in advanced memory technology, announced that it has completed the development of the world’s first 512-megabit (Mb) DDR2 SDRAM using 70-nanometer process, the smallest process technology yet applied to a DRAM device.  


The new 70nm technology maintains continuity with the 80nm and 90nm processes Samsung now uses in most DRAM production today. 


However, the number of chips yielded per wafer will be at 100 percent higher than could be obtained with 90nm technology. 


                    [DatePublished] => 2005-10-15 00:00:00
                    [ColumnID] => 133272
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abtest

Samsung develops world’s first 512-Mb DDR2 with 70-nm tech

October 15, 2005 - 12:00am

SEOUL – Samsung Electronics Co. Ltd., the world leader in advanced memory technology, announced that it has completed the development of the world’s first 512-megabit (Mb) DDR2 SDRAM using 70-nanometer...

Telecoms